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  • 标题:Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
  • 本地全文:下载
  • 作者:Sachin Gupta ; F. Rortais ; R. Ohshima
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2019
  • 卷号:9
  • 期号:1
  • 页码:1-7
  • DOI:10.1038/s41598-019-53367-z
  • 出版社:Springer Nature
  • 摘要:Two-dimensional MoS 2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS 2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS 2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS 2 channels were directly grown on SiO 2 /Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage (V g ) shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS 2 contacts is found to be +28.8 meV (at V g = 0V), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS 2 contact. With the application of positive gate voltage, SBH shows a reduction, which reveals ohmic behavior of Py/MoS 2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS 2 based spintronics and therefore using directly grown MoS 2 channels in the present study can pave a path towards high performance devices for large scale applications.
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