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  • 标题:Effect of Mobility on (I-V) Characteristics of Gaas MESFET
  • 其他标题:Effect of Mobility on (I-V) Characteristics of Gaas MESFET
  • 本地全文:下载
  • 作者:M Azizi ; C Azizi
  • 期刊名称:International Journal of Electrical and Computer Engineering
  • 电子版ISSN:2088-8708
  • 出版年度:2017
  • 卷号:7
  • 期号:1
  • 页码:169-175
  • DOI:10.11591/ijece.v7i1.pp169-175
  • 语种:English
  • 出版社:Institute of Advanced Engineering and Science (IAES)
  • 摘要:We present in this paper an analytical model of the current–voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. The predictions of the simulator are compared with the experimental data [01] and have been shown to be good.
  • 其他摘要:We present in this paper an analytical model of the current–voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. The predictions of the simulator are compared with the experimental data [01] and have been shown to be good.
  • 关键词:Electronics; semiconductors;GaAs; MESFET; mobility; modeling
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