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  • 标题:Low Power, Low Noise Amplifiers Design and Analysis for RF Receiver Front end Using 90NM CMOS Technology
  • 本地全文:下载
  • 作者:M. Ramana Reddy ; N.S Murthy Sharma ; P. Chandra Sekhar
  • 期刊名称:International Journal of VLSI Design & Communication Systems
  • 印刷版ISSN:0976-1527
  • 电子版ISSN:0976-1357
  • 出版年度:2016
  • 卷号:7
  • 期号:1
  • 页码:9
  • DOI:10.5121/vlsic.2016.7102
  • 出版社:Academy & Industry Research Collaboration Center (AIRCC)
  • 摘要:This work is mainly to ensure the reliability of low power low noise amplifier design and analysis which isuseful for 4G receiver front ends in particularly WIMAX applications. The low noise amplifiersimplemented by using different topologies namely (a) Cascoded Common source amplifier technique(b)Folded Cascode amplifier technique (c) Shunt feedback amplifier technique (d) Current reuse Commongate amplifier with gm boosted technique with 90 nm TSMC CMOS technology, which is used for WIMAXapplications with 1V supply. In order to simulate and measurement the parameters such as Scatteringparameters(S21, S12 S11. S22 ),noise-figure, input matching, output matching ,stability, linearity theCadence ,Agilent technologies ADS and lab view graphical software have been used and Compare theperformance of the various parameters .
  • 关键词:RF CMOSLNA; WIMAX; soc ; noise figure
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